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 JMnic
Product Specification
Silicon PNP Power Transistors
2SA1110
DESCRIPTION With TO-126 package Complement to type 2SC2590 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40w to 60w output amplifier APPLICATIONS For low-frequency power amplification
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
Absolute Maximun Ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -0.5 -1.0 1.2* 150 -55~150 ae ae UNIT V V V A A W
Note) *: Without heat sink
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain DC current gain Output capacitance Transition frequency IC=-100|I IE=-10|I CONDITIONS A;IB=0 A ;IC=0 MIN -120 -5
2SA1110
SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat hFE-1 hFE-2 COB fT
TYP.
MAX
UNIT V V
IC=-0.3A ;IB=-30mA IC=-0.3A ;IB=-30mA IC=-150mA ; VCE=-10V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-50mA ; VCB=-10V, 200 65 50 100
-1.0 -1.2 330
V V
30
pF MHz
hFE-1 Classifications P 65-110 Q 90-155 R 130-220 S 185-330
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1110
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1110
4


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